THE SMART TRICK OF GERMANIUM THAT NO ONE IS DISCUSSING

The smart Trick of Germanium That No One is Discussing

s is the fact that with the substrate content. The lattice mismatch causes a big buildup of pressure Power in Ge layers epitaxially developed on Si. This pressure Power is primarily relieved by two mechanisms: (i) technology of lattice dislocations with the interface (misfit dislocations) and (ii) elastic deformation of both the substrate plus the

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